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JEDEC JEP122H

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Failure Mechanisms and Models for Semiconductor Devices

Published by Publication Date Number of Pages
JEDEC 09/01/2016 114
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JEDEC JEP122H – Failure Mechanisms and Models for Semiconductor Devices

This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc.

Product Details

Published:
09/01/2016
Number of Pages:
114
File Size:
1 file , 2.2 MB
Note:
This product is unavailable in Russia, Ukraine, Belarus
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