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JEDEC JESD90

JEDEC JESD90

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A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIES

Published by Publication Date Number of Pages
JEDEC 11/01/2004 19
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JEDEC JESD90 – A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIES

This document describes an accelerated stress and test methodology for measuring device parameter changes of a single p-channel MOSFET after Negative Bias Temperature Instability (NBTI) stress at dc bias conditions. This document gives a procedure to investigate NBTI stress in a symmetric voltage condition with the channel inverted (VGS < 0) and no channel conduction (VDS = 0).There can be NBTI degradation during channel conduction (VGS < 0, VDS < 0), however, this document does not cover this phenomena.

Product Details

Published:
11/01/2004
Number of Pages:
19
File Size:
1 file , 94 KB
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This product is unavailable in Russia, Ukraine, Belarus
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