Description

This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G”and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.

Product Details

Published:

07/26/2016

Number of Pages:

24

File Size:

1 file , 370 KB

Note:

This product is unavailable in Ukraine, Russia, Belarus

Description

MIL MIL-PRF-19500/683F – Semiconductor Device, Transistor, Field Effect, N-Channel, Radiation Hardened (Total Dose and Single Event Effects) Type 2N7467U2, JANTXVR, F, G, and H and JANSR, F, G, and H

MIL-PRF-19500/683F covers the performance requirements for an N-channel, enhancement-mode powerMOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (E_AS) and maximum avalanche current (I_AS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.

Product Details

Published:

07/26/2016

Number of Pages:

24

File Size:

1 file , 370 KB

Note:

This product is unavailable in Ukraine, Russia, Belarus