Description

MIL MIL-PRF-19500/664E – Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7431, 2N7432, and 2N7433, JANTXVR, F, G, and H; and JANSR, F, G, and H

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANS and JANTXV product assurance levels. See 6.7 for JANHC and JANKC die versions.

Product Details

Published:

06/24/2016

Number of Pages:

28

File Size:

1 file , 430 KB

Note:

This product is unavailable in Ukraine, Russia, Belarus

Description

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANS and JANTXV product assurance levels. See 6.7 for JANHC and JANKC die versions.

Product Details

Published:

06/24/2016

Number of Pages:

28

File Size:

1 file , 430 KB

Note:

This product is unavailable in Ukraine, Russia, Belarus