IEC 62417 Ed. 1.0 b

IEC 62417 Ed. 1.0 b

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IEC 62417 Ed. 1.0 b

IEC 62417 Ed. 1.0 b

Original price was: $25.00.Current price is: $15.00.

Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Published by Publication Date Number of Pages
IEC 04/22/2010 16
Digital PDFMulti-User AccessPrintable

Description

IEC 62417 Ed. 1.0 b – Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Product Details

Edition:
1.0
Published:
04/22/2010
Number of Pages:
16
File Size:
1 file , 880 KB
Note:
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